transistor(npn) features z high breakdown voltage z low collector-emitter saturation voltage z complementary to mmsta92(pnp) marking:k3m maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.3 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 0.25 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =10v,i c =1ma 60 h fe(2) v ce =10v,i c =10ma 100 200 dc current gain h fe(3) v ce =10v,i c =30ma 75 collector-emitter saturation voltage v ce(sat) i c =20ma,i b =2ma 0.2 v base-emitter saturation voltage v be(sat) i c =20ma,i b =2ma 0.9 v transition frequency f t v ce =20v,i c =10ma,f=30mhz 50 mhz so t -323 1. base 2. emitter 3. collector MMSTA42 1 date:2011/05 www.htsemi.com semiconductor jinyu
mmst5551 2 date:2011/05 www.htsemi.com semiconductor jinyu
mmst5551 3 date:2011/05 www.htsemi.com semiconductor jinyu
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